IXTH 35N30/40N30/40N30 MegaMOSTMFET N-Channel Enhancement Mode power MOSFET devices, with a maximum operating voltage of 300V, a maximum current of 35A/40A/40A, and a fast switching time, are used in switch-mode power supplies, inverters, motor drives and other fields.
This document provides technical specifications for the IXTH 35N30, IXTH 40N30, and IXTM 40N30 N-channel enhancement mode MOSFETs. Key features include a rugged polysilicon gate cell structure, low package inductance, and suitability for switch-mode power supplies and motor controls.
| Drain-Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 35 A / 40 A |
| On-Resistance (RDS(on)) - IXTH 35N30 | 0.10 Ω |
| On-Resistance (RDS(on)) - IXTM 40N30 | 0.088 Ω |
| Thermal Resistance Junction-to-Case (RthJC) | 0.42 K/W |
The maximum continuous drain current at a case temperature of 25°C is 35 A.
The device can dissipate a maximum of 300 W at a case temperature of 25°C.
The specified mounting torque is 1.13 Nm or 10 lb.in.