This data sheet provides the maximum ratings, characteristics, etc. of HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family.
This document is a preliminary datasheet for the IXYS IXFJ40N30, an N-Channel Enhancement Mode High dv/dt Power MOSFET. It provides maximum ratings such as a drain-source voltage of 300 V and a continuous current of 40 A at 25°C.
The document outlines key features including a low profile high power package, rugged polysilicon gate cell structure, and Unclamped Inductive Switching (UIS) rating. It lists typical applications in DC-DC converters, synchronous rectification, battery chargers, and AC motor control.
| Drain-Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) | 40 A |
| Power Dissipation (PD) | 300 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance (RDS(on)) | 80 mΩ |
| Reverse Recovery Time (trr) | < 200 ns |
Typical applications include DC-DC converters, synchronous rectification, battery chargers, and AC motor control.
Yes, the device is UIS rated.