The document describes the features and characteristics of the product, IXTH 30N50.
This document provides a technical overview of the IXYS IXTH 30N50, an N-channel enhancement mode MegaMOS FET. It specifies maximum ratings such as a drain-source voltage (VDS) of 500 V and a continuous current (ID) of 30 A at 25°C.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) at 25°C | 30 A |
| Maximum Junction Temperature (TJ) | +150 °C |
| On-State Resistance (RDS(on)) | 0.17 Ω |
| Package Type | TO-247 AD |
It is suitable for switch-mode and resonant-mode power supplies, motor controls, and DC choppers.
The recommended mounting torque is 1.13 Nm or 10 lb.in.