This document introduces the HiPerFETTM Power MOSFET product series from IXYS, which features international standard packages, low RDS(on), rugged high voltage capability, and fast intrinsic diode. It is suitable for applications such as DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies.
This document provides technical specifications and characteristics for the IXFH/IXFT 30N50 and IXFH/IXFT 32N50 N-Channel Enhancement Mode Power MOSFETs. These devices belong to the HDMOS™ Family and utilize a rugged polysilicon gate cell structure.
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 30 A (30N50), 32 A (32N50) |
| Peak Pulse Drain Current (I_DM) | 120 A (30N50), 128 A (32N50) |
| Power Dissipation (P_D) | 360 W |
| Operating Junction Temperature Range | -55°C to +150°C |
| Package Types | TO-247 AD (IXFH), TO-268 (D3) |
They are suitable for DC-DC converters, battery chargers, switched-mode power supplies, and AC motor control.
The maximum operating junction temperature is 150°C.
Yes, they are rated for Unclamped Inductive Switching (UIS).