This document provides the characteristics of HiPerRFTM Power MOSFETs F-Class, including maximum voltage, continuous current, transient current, breakdown voltage, breakdown energy, leakage current, switching speed, etc.
The IXFH 28N50F and IXFT 28N50F are RF‑capable, N‑channel enhancement mode MOSFETs featuring a double‑metal process for low gate resistance, low package inductance, and an unclamped inductive switching (UIS) rating. They are offered in TO‑247 (IXFH) and TO‑268 (IXFT) packages with low intrinsic diode recovery and fast switching speeds.
These devices are intended for high‑frequency power conversion such as DC‑DC converters, switched‑mode and resonant‑mode power supplies operating above 500 kHz, DC choppers, industrial 13.5 MHz applications, pulse generation, laser drivers, and RF amplifiers. Their compact size and high power density provide space‑saving advantages in demanding electronic systems.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 28 A |
| Pulse Drain Current | 112 A |
| Power Dissipation (P_D) | 315 W |
| Weight (TO‑247) | 6 g |
| Mounting Torque (TO‑247) | 1.13 Nm |
| Switching Time (t_rise/fall) | < 250 ns |
The device is rated for a drain‑source voltage of 500 V.
It can conduct up to 28 A continuously at 25 °C.
The IXFH 28N50F is supplied in a TO‑247 AD package.
They are used in DC‑DC converters, switched‑mode and resonant‑mode power supplies, DC choppers, 13.5 MHz industrial applications, pulse generation, laser drivers, and RF amplifiers.