This document is a technical information document about IXYS' HiPerRFTM Power MOSFETs F-Class product. This product is a N-channel enhancement type avalanche rated, low Qg, low intrinsic Rg, high dV/dt, low trr RF power MOSFET.
This document provides technical information for the IXFH 28N50F and IXFT 28N50F N-Channel Enhancement Mode Power MOSFETs. These devices are designed for high-frequency switching applications, featuring RF capability, avalanche rating, and low intrinsic resistance.
| Drain-Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (Ios) | 28 A |
| Pulse Current (Icp) | 4190 mA |
| Operating Temperature Range | -55 ... +150 °C |
| Package Types | TO-247 AD (IXFH) / TO-268 (IXFT) |
The maximum operating temperature is +150 °C.