This document describes the features and characteristics of a power MOSFET product produced by IXYS, including high power dissipation, isolated mounting surface, and 2500V electrical isolation.
This document provides advanced technical information for the IXYS IXTC 26N50P, a PolarHV™ Power MOSFET featuring an electrically isolated tab. The device is designed as an N-Channel Enhancement Mode component rated for avalanche conditions up to 6 times the drain-source voltage.
The device is suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and AC motor control.