Key facts
- Brand
- STMicroelectronics
- Model
- STW25NM60N
- Category
- power switch
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
This document presents the STP25NM60N, STF25NM60N, STB25NM60N/-1, and STW25NM60N series of N-Channel 600V MOSFETs. These devices utilize second-generation MDmesh™ technology to achieve world-class low on-resistance and gate charge, making them suitable for high-efficiency converters.
Read onlineSTMicroelectronics STW25NM60N specifications
| Continuous Drain Current at Tc = 25°C | 20 A |
|---|---|
| Static Drain-source On Resistance | Typ. 0.140 Q |
| Total Dissipation at Tc = 25°C | 160 W |
| Max. Operating Junction Temperature | 150 °C |
Source: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
All STMicroelectronics STW25NM60N documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What technology is used in these MOSFETs?
The devices are realized with the second generation of MDmesh Technology.
From: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
What is the typical on-resistance?
A typical Ron(on) is 0.140 Q.
From: ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
What is the maximum drain‑source voltage for the STB25NM60N MOSFET?
The device is rated for a maximum drain‑source voltage of 600 V.
From: STMicroelectronics STB25NM60N / STF25NM60N / STP25NM60N / STW25NM60N Datasheet
What is the avalanche current rating of these MOSFETs?
The avalanche current is rated at 10 A.
From: STMicroelectronics STB25NM60N / STF25NM60N / STP25NM60N / STW25NM60N Datasheet