Key facts
- Brand
- STMicroelectronics
- Model
- STP25NM60N
- Category
- power switch
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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ManualST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
ST STP25NM60N STF25NM60N STB25NM60N/-1 STW25NM60N handbook
The STP25NM60N is a second generation MDmesh™ MOSFET N-channel 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247. It has the world's lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Read onlineSTMicroelectronics STP25NM60N specifications
| Maximum drain‑source voltage (Vds) | 600 V |
|---|---|
| Avalanche current | 10 A |
| Input capacitance (Ciss) | 2540 pF |
Source: STMicroelectronics STB25NM60N / STF25NM60N / STP25NM60N / STW25NM60N Datasheet
All STMicroelectronics STP25NM60N documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum drain‑source voltage for the STB25NM60N MOSFET?
The device is rated for a maximum drain‑source voltage of 600 V.
From: STMicroelectronics STB25NM60N / STF25NM60N / STP25NM60N / STW25NM60N Datasheet
What is the avalanche current rating of these MOSFETs?
The avalanche current is rated at 10 A.
From: STMicroelectronics STB25NM60N / STF25NM60N / STP25NM60N / STW25NM60N Datasheet