STMicroelectronics 16KBIT Manuals

We have 4 manuals for the STMicroelectronics 16KBIT: 4 Datasheets. Free to view online or download as PDF.

STMicroelectronics 16KBIT manuals

ST M95160-145 Automotive 16-Kbit serial SPI bus EEPROM with high-speed clock handbook

Datasheet

This document describes the features and characteristics of the M95160-145 automotive 16-Kbit serial SPI bus EEPROM product, including compatibility with the SPI bus serial interface, extended operating temperature range, single supply voltage, high speed, status register, hardware protection, byte and page write, self-timed programming cycle, adjustable size read-only EEPROM area, enhanced ESD protection, more than 1 million write cycles, and more than 40-year data retention.

ST M24C16 M24C08 M24C04 M24C02 M24C01 16Kbit 8Kbit 4Kbit 2Kbit 1Kbit Serial I C bus EEPROM handbook

Datasheet

This document describes the features and characteristics of the M24C16, M24C08, M24C04, M24C02, and M24C01 serial EEPROM chips that support the I²C bus. These chips have a two-wire I²C serial interface, support a 400kHz protocol, operate at a single supply voltage of 2.5V to 5.5V or 1.8V to 5.5V, and have features such as write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/latch-up protection, over 1 million write cycles, and over 40-year data retention.

STMICROELECTRONICS M93C86 M93C76 M93C66 M93C56 M93C46 16Kbit 8Kbit 4Kbit 2Kbit 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM handbook

Datasheet

M93C86, M93C76, M93C66 M93C56, M93C46 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE® Serial Access EEPROM is industry standard MICROWIRE Bus single supply voltage 4.5 to 5.5V dual organization by Word (x16) or Byte (x8) programming instructions work on Byte, Word or Entire Memory self-timed programming cycle with auto-erase ready/busy signal speed 1MHz Clock Rate, 10ms Write Time sequential read operation enhanced ESD/Latch-Up Behaviour more than 1 Million Erase/Write Cycles more than 40 Year Data Retention