The TT8K11 is a low voltage drive (4V drive), low on-resistance, Nch + Nch MOSFET that is suitable for switching applications.
The TT8K11 is a low‑on‑resistance, 4 V‑drive N‑channel MOSFET offered in a compact TSST8 surface‑mount package. It features a low voltage drive, small size, and built‑in ESD protection diode, making it suitable for high‑density board designs.
Typical applications include audio‑visual equipment, office automation, communication devices, and other general‑purpose electronic products. The datasheet includes absolute maximum ratings, thermal resistance data, and measurement circuit examples to aid designers in safe and reliable implementation.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 420 V |
| Continuous drain current (ID) | 3 A |
| Power dissipation (PD) | 1.25 W total |
| Maximum channel temperature (TCH) | 150 °C |
| Gate threshold voltage (Vth) | 1.0 V |
| Package type | TSST8 surface‑mount |
The TT8K11 can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 3 A.
The device is designed for a low‑voltage 4 V gate drive.
It is offered in a small surface‑mount TSST8 package.