The 2SK3296 is an N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
The 2SK3296 is an N‑Channel power MOSFET designed for low‑voltage, high‑current applications such as DC/DC converters with synchronous rectification. It offers low on‑state resistance, low gate charge, and built‑in gate protection.
Key specifications include a 20 V drain‑to‑source rating, 35 A continuous drain current, 140 A pulsed current, and various TO‑220AB, TO‑262, and TO‑263 package options. The datasheet also details electrical characteristics, typical performance curves, and thermal limits.
| Package options | TO‑220AB, TO‑262, TO‑263 |
|---|---|
| Built‑in gate protection diode | Yes |
It is offered in TO‑220AB, TO‑262, and TO‑263 packages.
Yes, the device has a built‑in gate protection diode.