This document describes the features and characteristics of the FQPF9N08 80V N-Channel MOSFET, which is suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
The FQPF9N08 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low on‑state resistance and fast switching performance.
Key specifications include an 80 V drain‑source rating, 7 A continuous drain current at 25 °C, 28 A pulsed current, low gate charge (5.9 nC), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with defined thermal resistance values.
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 7.0 A |
| Pulsed Drain Current | 28 A |
| Gate Charge (Qg) | 5.9 nC (typical) |
| On‑Resistance (RDS(on)) | 0.21 Ω (typical) |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance, Junction‑to‑Case | 6.52 °C/W |
| Package Type | TO‑220F |
The device can handle a continuous drain current of 7.0 A at a case temperature of 25 °C.
The single pulsed avalanche energy is rated at 55 mJ.
The gate‑source voltage rating is +25 V.
It is supplied in a TO‑220F package.