FQPF9N08 is an 80V N-Channel MOSFET produced by Fairchild Semiconductor International. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance. This device is suitable for low voltage applications such as automotive, high efficiency switching for DC/DC converters and DC motor control.
The FQPF9N08 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, high‑efficiency switching for DC‑DC converters, and DC motor control.
Key features include a 7 A continuous drain current at 25 °C, low typical gate charge of 5.9 nC, low output capacitance, fast switching, 100 % avalanche tested capability, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and meets stringent automotive reliability requirements.
| Drain-Source Voltage | 80 V |
|---|---|
| Continuous Drain Current (25 °C) | 7.0 A |
| Pulsed Drain Current | 28 A |
| Gate-Source Voltage | ±25 V |
| Power Dissipation (25 °C) | 23 W |
| Junction-to-Case Thermal Resistance | 6.52 °C/W |
| Junction-to-Ambient Thermal Resistance | 62.5 °C/W |
| Maximum Junction Temperature | 175 °C |
| Single Pulsed Avalanche Energy | 55 mJ |
| Avalanche Current | 7.0 A |
The continuous drain current is 7.0 A at 25 °C (4.95 A at 100 °C).
The typical total gate charge is 5.9 nC.
The MOSFET is supplied in a TO‑220F package.
The maximum drain‑source voltage is 80 V.