FQPF90N08 is a N-channel MOSFET manufactured by Fairchild Semiconductor. It has a maximum voltage of 80V and a maximum current of 44A. This device features low on-state resistance, high switching speed, high surge capability, etc., and is suitable for low-voltage applications such as automotive, DC/DC converters and DC motor control.
The FQPF90N08 is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low on‑resistance and fast switching.
Key specifications include an 80 V drain‑source rating, 44 A continuous drain current at 25 °C, typical on‑resistance of 0.016 Ω, and a gate charge of 84 nC. The device is supplied in a TO‑220F package with a junction‑to‑case thermal resistance of 2.42 °C·W and a maximum junction temperature of 175 °C.
| Drain‑Source Voltage (V_DSS) | 80 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 44 A |
| On‑Resistance (R_DS(on)) typical | 0.016 Ω |
| Gate Charge (Q_g) typical | 84 nC |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.42 °C·W |
The device can handle a continuous drain current of 44 A at a case temperature of 25 °C.
The MOSFET is rated for a maximum junction temperature of 175 °C.
It is supplied in a TO‑220F package.