This data sheet introduces the features and characteristics of FAIRCHILD FQPF90N08 80V N-Channel MOSFET, including operating voltage, operating current, switching speed, junction temperature, etc.
The FQPF90N08 is an N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage automotive, DC‑DC converter, and motor‑control applications.
Key electrical specifications include an 80 V drain‑source rating, 44 A continuous drain current at 25 °C, 176 A pulsed current, and an on‑resistance of 0.0162 Ω at VGS = 10 V. The device features low gate charge (84 nC typical) and modest capacitances. It is supplied in a TO‑220F package with a junction temperature limit of 175 °C.
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Typical Gate Charge (Qg) | 84 nC |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 80 V.
The typical gate charge is 84 nC.
The MOSFET is supplied in a TO‑220F package.