This document introduces the inventory, technical data, encyclopedia information, and hot news of Dinghao company. It includes the features and characteristics of QFET products.
The FQPF34N20 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, fast switching, low gate charge and 100 % avalanche testing, making it suitable for high‑efficiency DC‑DC converters, SMPS, UPS and motor‑control applications.
The document provides absolute maximum ratings, electrical characteristics, thermal data, typical performance curves, and package dimensions (TO‑220F). It also includes trademark, disclaimer and product‑status information.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 17.5 A |
| Pulsed Drain Current (I_D) (Note 1) | 70 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) typical | 0.075 Ω @ V_GS=10 V |
| Total Gate Charge (Q_g) typical | 60 nC |
| Power Dissipation (P_D) @ 25 °C | 55 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.27 °C·W |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 17.5 A continuously at a case temperature of 25 °C.
Yes, the datasheet states the device is 100 % avalanche tested.
The MOSFET is supplied in a TO‑220F package.