FQPF34N20L is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
The FQPF34N20L is a 200 V logic N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑resistance, low gate charge, and fast switching for high‑efficiency DC‑DC converters and motor control applications.
Key specifications include a continuous drain current of 17.5 A, on‑resistance of 0.075 Ω at VGS = 10 V, typical gate charge of 55 nC, and a power dissipation rating of 55 W at 25 °C. The device is supplied in a TO‑220 package with thermal resistance RθJC = 2.27 °C/W.
| Drain‑Source Voltage (VDSS) | 200 V |
|---|---|
| Continuous Drain Current (ID) | 17.5 A |
| On‑Resistance (RDS(on)) | 0.075 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 55 nC |
| Power Dissipation (PD) at 25 °C | 55 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.27 °C/W |
The device is rated for a maximum drain‑source voltage of 200 V.
The typical on‑resistance is 0.075 Ω when VGS is 10 V.