This document describes the features of the FQPF34N20L, a 200V logic N-channel MOSFET product produced by Fairchild Semiconductor International. It utilizes advanced DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capability. The product is suitable for applications such as high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
The FQPF34N20L is an N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters, SMPS, and motor‑control applications.\n\nKey features include a 200 V drain‑source rating, 17.5 A continuous drain current, low gate charge (typical 55 nC), low on‑resistance (≈0.075 Ω at VGS=10 V), and robust avalanche capability. The datasheet provides absolute maximum ratings, electrical characteristics, switching behavior, and package dimensions for the TO‑220F package.