FQAF19N60 is a 600V N-Channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, excellent switching performance and high energy pulse endurance.
The FQAF19N60 is a 600 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include a 600 V drain‑source rating, 11.2 A continuous drain current at 25 °C, 44.8 A pulsed current, low gate charge (~70 nC), and a maximum power dissipation of 120 W at 25 °C. The device is supplied in a TO‑3PF package with a junction‑to‑case thermal resistance greater than 1.04 °C/W.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 11.2 A |
| Continuous Drain Current (I_D) @ 100 °C | 7.0 A |
| Pulsed Drain Current (I_D,pulse) | 44.8 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 120 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | > 1.04 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C/W |
The device is rated for a maximum drain‑source voltage of 600 V.
The MOSFET has a typical gate charge of about 70 nC.
The on‑resistance is typically around 0.38 Ω when VGS is 10 V.
It can dissipate up to 120 W at a case temperature of 25 °C.