FQAF19N60 is a 600V N-channel MOSFET with a continuous current of 11.2A and a RDS(on) of 0.38Ω. The device is manufactured using Fairchild's proprietary planar stripe DMOS technology and features low on-state resistance, high switching speed and improved dv/dt capability.
The FQAF19N60 is a 600 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑resistance, fast switching, and robust avalanche capability.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and package dimensions for the TO‑3PF case. Key parameters such as drain‑source voltage, continuous and pulsed drain current, gate charge, and thermal resistance are provided for design engineers.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 11.2 A |
| Pulsed Drain Current (ID) @ 25 °C | 44.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 120 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | > 1.04 °C/W |
| Typical Gate Charge (Qg) | 70 nC |
| On‑Resistance (RDS(on)) | 0.38 Ω (typical) |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 11.2 A continuously at 25 °C.
The typical total gate charge is about 70 nC.
The MOSFET can dissipate up to 120 W at a case temperature of 25 °C.