The document contains information about spot inventory, technical data, encyclopedia information, and hot news. It describes the features and characteristics of the QFET products.
The FQAF13N50 is a 500 V N‑Channel enhancement‑mode power MOSFET designed with Fairchild’s planar stripe DMOS technology for low on‑resistance and fast switching. It is intended for high‑efficiency switch‑mode power supplies, power factor correction and electronic lamp ballast applications.
The document provides absolute maximum ratings, thermal characteristics, electrical and typical performance curves, as well as package dimensions for the TO‑3PF case. It also includes trademark, disclaimer and product status information.
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9.6 A |
| Continuous Drain Current (I_D) @ 100 °C | 6.1 A |
| Pulsed Drain Current | 38.4 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 100 W |
| Junction‑to‑Case Thermal Resistance | 1.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance | 40 °C·W |
The device is rated for a maximum drain‑source voltage of 500 V.
It can conduct up to 9.6 A continuously at a case temperature of 25 °C.
The part can dissipate up to 100 W when mounted at 25 °C.