Fairchild FQAF13N50 500V N-Channel MOSFET Datasheet

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Fairchild FQAF13N50 500V N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
689 KB
Published
12 April, 2012
Updated
30 September, 2023
MD5 checksum
8C93F15E228716C4D58B1C672F71DF23

About this manual

The FQAF13N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge (typical 45 nC), low output capacitance (typical 25 pF), fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies and power‑factor‑correction circuits.

Key specifications include a continuous drain current of 9.6 A at 25 °C, pulsed drain current of 38.4 A, a drain‑source voltage rating of 500 V, and a power dissipation capability of 100 W. Thermal resistance values are 1.25 °C·W (junction‑to‑case) and 40 °C·W (junction‑to‑ambient). The device is supplied in a TO‑3PF package.

What's inside

  • General Description
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions
  • Trademark Information
  • Disclaimer

Specifications

Drain‑Source Voltage (V_DSS)500 V
Continuous Drain Current (I_D) @ 25 °C9.6 A
Pulsed Drain Current (I_D) (Note 1)38.4 A
Gate‑Source Voltage (V_GS)30 V
Power Dissipation (P_D) @ 25 °C100 W
Junction‑to‑Case Thermal Resistance (RθJC)1.25 °C·W
Junction‑to‑Ambient Thermal Resistance (RθJA)40 °C·W
Output Capacitance (Coss)245 pF (typical)

Frequently asked questions

What is the maximum drain‑source voltage for the FQAF13N50?

The device is rated for a maximum drain‑source voltage of 500 V.

What is the continuous drain current rating at 25 °C?

The continuous drain current is 9.6 A at 25 °C.

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