FQAF11N90 is a 900V N-channel MOSFET that features low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation modes.
The FQAF11N90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key specifications include a continuous drain current of 7.2 A at 25 °C, a pulsed drain current rating of 28.8 A, typical gate charge of 72 nC, and a maximum drain‑source voltage of 900 V. The device is packaged in a TO‑3PF case with thermal resistance of 1.04 °C·W (junction‑to‑case) and is rated for operation from –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 7.2 A |
| Typical Gate Charge (Qg) | 72 nC |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.04 °C·W |
The maximum drain‑source voltage is 900 V.
The typical gate charge is 72 nC.
It can handle a continuous drain current of 7.2 A at 25 °C.