The FQAF11N90 is a high-performance N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor. It features low on-state resistance, fast switching speed, and can withstand high energy pulse current. It is suitable for high efficiency switch mode power supplies.
The FQAF11N90 is a 900 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include a continuous drain current of 7.2 A at 25 °C, a pulsed drain current of 28.8 A, a typical gate charge of 72 nC, and a maximum power dissipation of 120 W. The datasheet also details thermal resistance values, switching characteristics, and test circuit diagrams for gate charge and diode recovery.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 7.2 A |
| Pulsed Drain Current (ID) (Note 1) | 28.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Single Pulsed Avalanche Energy | 1000 mJ |
| Power Dissipation (PD) @ 25 °C | 120 W |
| Thermal Resistance, Junction‑to‑Case (RJC) | 1.04 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RJA) | 40 °C·W |
| Typical Gate Charge (Qg) | 72 nC |
The device is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 7.2 A continuously at a case temperature of 25 °C.
The typical gate charge is 72 nC.
The MOSFET can dissipate up to 120 W at 25 °C.