BSS138W is a N-channel logic level enhancement mode field effect transistor. This product has an extremely low RDS(ON), rugged and reliable, and fast switching performance. It is particularly suitable for low voltage, low current applications such as small servo motor control.
This document is a datasheet for the BSS138W, an N-Channel enhancement mode field effect transistor designed for low voltage and low current applications. Key features include a high density cell design for extremely low on-state resistance and a rugged, reliable SOT-323 surface mount package. The device is suitable for applications such as small servo motor control and power MOSFET gate drivers.
| Drain-Source Voltage | 50 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 0.21 A |
| Pulsed Drain Current | 0.84 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Maximum Power Dissipation | 340 mW |
| Thermal Resistance, Junction to Ambient | 367 °C/W |
The maximum continuous drain current is 0.21 A.
The operating and storage junction temperature range is -55 to +150 °C.
The maximum power dissipation is 340 mW.