This document describes the features and characteristics of Fairchild's BSS138 N-Channel enhancement mode field effect transistor. These transistors are produced using Fairchild's proprietary DMOS technology, which has high cell density to minimize on-state resistance and provide rugged, reliable, and fast switching performance. They are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
The BSS138 is an N-Channel enhancement mode field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. These products are designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
| Drain-Source Voltage | 50 V |
|---|---|
| Gate-Source Voltage | ±20 V |
| Operating Junction Temperature Range | −55 to +150 °C |
| Package Type | SOT-23 |
| On-Resistance @ VGS = 10 V | 3.5 Ω |
The BSS138 is suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
The on-state resistance is 3.5 Ω when VGS is 10 V.