Fairchild Semiconductor BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet

BSS138K is an N-channel logic level enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. It is packaged in an ultra-small surface mount package and is Pb Free/RoHS compliant. It has a green compound and strong ESD protection.


Fairchild Semiconductor BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
289 KB
Published
11 July, 2012
Updated
29 September, 2023
Model
BSS138
MD5 checksum
6B176CD6BBF775227852E3CD0A274377

About this manual

This document is a datasheet for the Fairchild Semiconductor BSS138K, an N-Channel Logic Level Enhancement Mode Field Effect Transistor. Key features include low on-resistance, low gate threshold voltage, and ultra-small surface mount packaging in the SOT-23 form factor.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Performance Characteristics
  • Physical Dimensions
  • TradeMarks
  • Disclaimer
  • Life Support Policy
  • Product Status Definitions

Specifications

Drain-Source Voltage50 V
Gate-Source Voltage+12 V
Continuous Drain Current0.22 A
Operating Junction Temperature Range-55 to +150 °C
Total Device Dissipation350 mW
Thermal Resistance, Junction to Ambient350 °C/W
Package TypeSOT-23

Frequently asked questions

What is the maximum continuous drain current for this transistor?

The maximum continuous drain current is 0.22 A.

What is the maximum total device dissipation rating?

The maximum total device dissipation is 350 mW.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is +12 V.

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