Datasheet
K4S281633D-RL(N) Rev. 0.6 is a 2001 November released CMOS SDRAM with 8Mx16, 54CSP, VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V
Datasheet
K4S281633D-RL(N) Rev. 0.6 Nov. 2001 CMOS SDRAM Preliminary 8Mx16 Revision 0.6 November 2001 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V)
User Manual
K4S561633C-R(B)L/N/P is a 4M x 16Bit x 4 Banks Synchronous DRAM launched by Samsung. It adopts 54CSP package and supports 3.0V/3.0V and 3.3V/3.3V two power supply voltages. The chip has four banks operation, MRS cycle, address key program, delay cycle, burst length and burst type functions, and supports auto refresh.
User Manual
The K4S561633C-R(B)L/N/P is a synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It has a storage capacity of 4M×16 bits×4 banks, a working voltage of 3.0V or 3.3V, and a working temperature range of -25°C to 85°C. The device has four bank operations, MRS cycle, CAS latency, burst length, burst type, self-refresh, and a 64ms refresh period.