The K4S561633C-R(B)L/N/P is a synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It has a storage capacity of 4M×16 bits×4 banks, a working voltage of 3.0V or 3.3V, and a working temperature range of -25°C to 85°C. The device has four bank operations, MRS cycle, CAS latency, burst length, burst type, self-refresh, and a 64ms refresh period.
The K4S561633C-R(B)L/N/P is a 16 M × 16 bit synchronous DRAM organized as four banks. It operates with 3.0 V or 3.3 V power supplies and supports multiple CAS latencies, burst lengths, and burst types. The device is fabricated with Samsung's high‑performance CMOS technology and is intended for high‑bandwidth memory systems.
The datasheet details the 54‑ball CSP package, absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, and command set. It also includes pin‑out diagrams, functional block diagrams, and electrical characteristics such as supply voltage range, power dissipation, and temperature limits.
| Memory organization | 4M × 16 bit × 4 banks |
|---|---|
| Supply voltage (VDD) | 2.7 V min / 3.0 V typ / 3.6 V max |
| Package type | 54‑ball CSP |
| Maximum operating frequency | 133 MHz (CL = 3) |
| Power dissipation | 1 W |
The device operates with a supply voltage from 2.7 V minimum to 3.6 V maximum, with a typical value of 3.0 V.
The SDRAM can run up to 133 MHz when CAS latency is set to 3.
It is supplied in a 54‑ball CSP (Chip Scale Package).
Voltage on any pin relative to Vss may range from –1.0 V to +46 V.