K4S281633D-RL(N) Rev. 0.6 is a 2001 November released CMOS SDRAM with 8Mx16, 54CSP, VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V
The Samsung K4S281633D-RL(N) is an 8M‑by‑16‑bit CMOS SDRAM offered in a 54‑ball CSP package. It supports 3.0 V and 3.3 V power supplies, LVTTL‑compatible multiplexed addresses, four‑bank operation, and programmable CAS latency (1‑3) and burst lengths (1, 2, 4, 8, full page). The device is designed for high‑performance memory systems with a maximum frequency of 133 MHz (CL = 3).
The datasheet provides detailed ordering information, package dimensions, absolute maximum ratings, DC and AC operating conditions, timing parameters, and mode‑register programming. It also includes a simplified truth table for command encoding and a recommended power‑up sequence.
| Package type | 54‑ball CSP (54CSP) |
|---|---|
| Memory organization | 8M × 16 bits |
| Maximum frequency | 133 MHz (CL = 3) |
| Supply voltage (Vpp) | 2.7 V min / 3.0 V typ / 3.6 V max |
| Operating temperature (extended) | -25 °C to 85 °C |
| Power dissipation | 1 W |
| Number of banks | 4 |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Interface | LVTTL compatible with multiplexed address |
The 100 MHz CL‑2 version is listed as K4S281633D‑RL/N75.
Vpp should be between 2.7 V (minimum) and 3.6 V (maximum), with a typical value of 3.0 V.