K4S281633D-RL(N) Rev. 0.6 Nov. 2001 CMOS SDRAM Preliminary 8Mx16 Revision 0.6 November 2001 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V & 3.3V/3.3V)
The Samsung K4S281633D-RL(N) is an 8M × 16‑bit (128 Mbit) synchronous DRAM offered in a 54‑ball CSP package. It supports 3.0 V and 3.3 V power supplies, LVTTL‑compatible multiplexed address lines, and four banks of operation. The device provides configurable CAS latency (1‑3), burst lengths (1, 2, 4, 8, full page), and both sequential and interleaved burst types.
The datasheet includes ordering information, pin‑out diagrams, absolute maximum ratings, DC and AC operating characteristics, timing tables, and the mode‑register programming sequence. It also details power‑up procedures and recommended operating conditions for both commercial (‑2 °C to 70 °C) and extended (‑25 °C to 85 °C) temperature ranges.
| Capacity | 8M × 16 bits (128 Mbit) |
|---|---|
| Maximum Clock Frequency | 133 MHz (CL = 3) |
| Supply Voltage (Vpp) | 2.7 V – 3.6 V |
| Operating Temperature (Extended) | ‑25 °C – 85 °C |
| Number of Banks | 4 |
| CAS Latency Options | 1, 2, 3 |
| Burst Length Options | 1, 2, 4, 8, Full page |
| Power Dissipation | 1 W |
| Storage Temperature Range | ‑55 °C – +150 °C |
The device operates with a Vpp supply between 2.7 V and 3.6 V.
The SDRAM contains four independent banks.