Fairchild MJD42C Manuals

MJD42C is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. The maximum collector-base voltage is -100V, the maximum collector-emitter voltage is -100V, the maximum emitter-base voltage is -5V, the maximum collector current is -6A, the maximum base current is -2A, and the maximum collector power consumption is 20W. The maximum junction temperature is 150℃ and the storage temperature is -65~150℃. MJD42C is suitable for general-purpose amplifiers and low-speed switching applications.

MJD42C is a PNP type RF power transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -100V, maximum collector-base voltage is -100V, maximum emitter-base voltage is -5V, maximum collector current is -6A, maximum base current is -2A, and maximum collector power dissipation is 20W (25℃). The maximum junction temperature is 150℃.