MJD42C is a PNP type RF power transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -100V, maximum collector-base voltage is -100V, maximum emitter-base voltage is -5V, maximum collector current is -6A, maximum base current is -2A, and maximum collector power dissipation is 20W (25℃). The maximum junction temperature is 150℃.
The document describes the Fairchild MJD42C, a general-purpose amplifier designed for low-speed switching applications. It is an electrically similar alternative to the popular TIP42C device and is available in both surface mount (D-PAK) and straight lead (I.PACK) configurations.
Key specifications include a collector-emitter voltage of -100V, a maximum DC collector current of -6A, and a pulse current capability of -10A. The transistor features a junction temperature rating up to 150°C and offers a DC current gain ranging from 30 to 75 under specific test conditions.
| Collector Current (DC) | -6 A |
|---|---|
| Collector Dissipation (Tc=25°C) | 20 Ww |