This datasheet is about FQPF3P20 P-channel QFET datasheet, includes features and characteristics of this product, such as absolute maximum ratings, thermal resistance, electrical characteristics etc.
The FQPF3P20 is a P‑channel QFET MOSFET featuring avalanche‑rugged technology, low intrinsic capacitances, and a TO‑220F package. It offers a high breakdown voltage, low on‑resistance, and robust safe‑operating area for power switching applications.
Key electrical ratings include a -200 V drain‑to‑source breakdown voltage, 2.2 A continuous drain current at 25 °C, and a typical on‑state resistance of 2.06 Ω. The device is packaged in a TO‑220F case with defined mechanical dimensions and thermal resistance values for reliable heat dissipation.
| Drain‑to‑Source Breakdown Voltage (BVdss) | -200 V |
|---|---|
| Continuous Drain Current (Tc = 25 °C) | 2.2 A |
| Gate Threshold Voltage (Vgs(th)) | -3.0 to 5.0 V |
| On‑State Resistance (Rds(on)) | 2.06 Ω (typ) |
| Total Power Dissipation (Tc = 25 °C) | 32 W |
| Package Type | TO‑220F |
| Package Length | 10.16 mm |
The device is rated for a maximum drain‑to‑source voltage of -200 V.
The typical continuous drain current at 25 °C is 2.2 A.
The typical on‑state resistance is 2.06 Ω.
It uses a TO‑220F package.