The FQPF3P20 is a P-channel MOSFET device from Fairchild Semiconductor. It has a maximum voltage of -200V and a maximum current of -2.2A. It has excellent switching characteristics and a gate charge of 6.0nC. Its RDS(ON) is 2.06Ω.
The FQPF3P20 is a P‑channel QFET featuring avalanche‑rugged technology, low intrinsic capacitances, and a TO‑220F package. It is designed for high‑voltage switching applications and includes advanced gate‑oxide and safe‑operating‑area features.
The datasheet lists absolute maximum ratings, detailed electrical characteristics such as breakdown voltage, on‑state resistance, and gate charge, as well as thermal resistance values and mechanical dimensions of the TO‑220F package.
| Drain‑Source Breakdown Voltage (BVdss) | -200 V |
|---|---|
| Continuous Drain Current (Tc = 25 °C) | 2.2 A |
| Total Power Dissipation (Tc = 25 °C) | 32 W |
| Gate Threshold Voltage (Vgs(th)) | -3.0 to 5.0 V |
| On‑State Resistance (Rds(on)) Typical | 2.06 Ω |
| Input Capacitance (Ciss) Typical | 190 pF |
| Package Type | TO‑220F |
The maximum drain‑to‑source breakdown voltage is –200 V.
The typical total gate charge is 6.0 nC.
It is supplied in a TO‑220F package.
The continuous drain current at 25 °C is 2.2 A.