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The FQPF3N30 is a 300 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching and 100 % avalanche tested capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions and legal notices. It also includes test circuit diagrams for gate charge, resistive switching, inductive switching and diode recovery, as well as trademark and disclaimer information.
| Drain‑Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 1.95 A |
| Pulsed Drain Current (I_DM) | 78 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Gate Charge (Q_g) typical | 5.5 nC |
| On‑Resistance (R_DS(on)) typical | 2.22 mΩ @ V_GS=10 V |
The device is rated for a maximum drain‑source voltage of 300 V.
It can handle a continuous drain current of 1.95 A at 25 °C.
Yes, the device is 100 % avalanche tested.
The typical gate charge is 5.5 nC.