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The FQPF3N30 is a 300 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. The device is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
Key electrical parameters include a continuous drain current of 1.95 A at 25 °C, a pulsed drain current rating of 78 A, a gate‑source voltage rating of +30 V, and a typical gate charge of 5.5 nC. The MOSFET is supplied in a TO‑220F package with a maximum power dissipation of 20 W and a junction‑to‑case thermal resistance of 6.25 °C·W.
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 1.95 A |
| Pulsed Drain Current (ID) (Note 1) | 78 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Maximum Power Dissipation (PD) at 25 °C | 20 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 6.25 °C·W |
| Typical Gate Charge (Qg) | 5.5 nC |
| Package | TO‑220F |
The maximum continuous drain current is 1.95 A at a junction temperature of 25 °C.
The drain‑source breakdown voltage is rated at 300 V.
The typical gate charge is 5.5 nC.
It is supplied in a TO‑220F package.