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The FQAF34N20 is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching, and robust avalanche capability, making it suitable for high‑efficiency DC‑DC converters, SMPS, motor control and UPS applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions (TO‑3PF). It also includes test circuit examples, thermal response data, and legal notices regarding trademarks, life‑support usage, and product status definitions.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 23 A |
| Pulsed Drain Current (ID) @ 100 °C | 92 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 0.075 Ω |
| Power Dissipation (PD) @ 25 °C | 95 W |
| Typical Gate Charge (Qg) | 60 nC |
The device can handle a continuous drain current of 23 A at 25 °C.
The drain‑source breakdown voltage is rated at 200 V.
The typical gate charge is about 60 nC.