This document details QFET devices
The FQAF34N20 is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS inverters and motor control.
Key specifications include a continuous drain current of 23 A at 25 °C, pulsed current capability of 92 A, low on‑resistance of about 0.075 Ω at VGS = 10 V, typical gate charge of 60 nC, and robust avalanche rating. The device is supplied in a TO‑3PF package with detailed thermal and electrical characteristics provided.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 23 A |
| Pulsed Drain Current (I_D) (Note 1) | 92 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) @ VGS=10 V | 0.075 Ω |
| Typical Gate Charge (Q_g) | 60 nC |
| Power Dissipation (P_D) @ 25 °C | 95 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.32 °C·W⁻¹ |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 23 A continuously at a case temperature of 25 °C.
Yes, the MOSFET is 100 % avalanche tested.