Dinghao Electronic Commerce Co., Ltd. is an electronic components professional supplier integrating R & D, production, sales and service. We mainly deal with QFET, QFET, QFET and other electronic components.
The FQAF27N25 is a 250 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters and switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include a continuous drain current of 19 A at 25 °C, a pulsed drain current of 76 A, a typical on‑resistance of 0.119 Ω at VGS = 10 V, and a total gate charge of about 50 nC. The device is supplied in a TO‑3PF package and features low gate charge, low output capacitance, and a 95 W power dissipation rating at 25 °C.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 19 A |
| Pulsed Drain Current (I_D) (Note 1) | 76 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) typical @ V_GS=10 V | 0.119 Ω |
| Total Gate Charge (Q_g) typical | 50 nC |
| Power Dissipation (P_D) @ 25 °C | 95 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.32 °C·W |
The device is rated for a maximum drain‑source voltage of 250 V.
Typical on‑resistance is 0.119 Ω when the gate‑source voltage is 10 V.