This document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao company. The document mentions QFET products and describes their features and characteristics.
The FQAF27N25 is a 250 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters and switch‑mode power supplies, offering low on‑state resistance, fast switching and robust avalanche performance.
Key specifications include a drain‑source voltage rating of 250 V, continuous drain current of 19 A at 25 °C, pulsed current of 76 A, on‑resistance of 0.119 Ω at Vgs = 10 V, typical gate charge of 50 nC, and a power dissipation of 95 W. Thermal resistance is 1.32 °C/W (junction‑to‑case) and the device is rated for operation from –55 °C to +150 °C.
| Typical Gate Charge (Qg) | 50 nC |
|---|---|
| Junction‑to‑Case Thermal Resistance | 1.32 °C/W |