FQAF22P10 is a 100V P-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-resistance, superior switching performance, and high energy pulse tolerance. This device is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
The FQAF22P10 is a P‑Channel enhancement‑mode power MOSFET manufactured with Fairchild’s planar‑stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters and DC motor control.
Key specifications include a -100 V drain‑source rating, -16.6 A continuous drain current at 25 °C, 0.125 Ω on‑resistance at VGS = ‑10 V, typical gate charge of 40 nC, and input/output capacitances of 1170 pF/460 pF. The device is packaged in a TO‑3PF case with dimensions listed in the datasheet.
| Continuous Drain Current (ID) at 25 °C | -16.6 A |
|---|---|
| On‑Resistance (RDS(on)) | 0.125 Ω @ VGS = -10 V |
| Typical Gate Charge (Qg) | 40 nC |
| Output Capacitance (Coss) | 460 pF (typ) |
It can conduct up to -16.6 A continuously at a case temperature of 25 °C.
The typical on‑resistance is 0.125 Ω when VGS = -10 V.
The typical total gate charge is about 40 nC.