FQAF16N25C is an N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
The Fairchild FQAF16N25C is a 250 V N‑Channel enhancement‑mode power MOSFET built with planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching and 100 % avalanche testing, making it suitable for high‑efficiency DC/DC converters, SMPS, UPS and motor‑control applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit diagrams for gate charge, resistive switching, inductive switching and diode recovery. Package dimensions for the TO‑3PF case are also listed, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (Tj=25 °C) | 114 A |
| Pulsed Drain Current | 45.6 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 0.272 Ω (typical at VGS=10 V) |
| Typical Gate Charge (Qg) | 41 nC |
| Power Dissipation (PD) | 73 W @ 25 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.7 °C·W⁻¹ |
The device is rated for a maximum drain‑source voltage of 250 V.
The typical gate charge is 41 nC.
It is supplied in a TO‑3PF package.
The MOSFET can dissipate up to 73 W at a case temperature of 25 °C.