FQAF16N25C is a 250V N-Channel MOSFET device produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it suitable for high efficiency switching DC/DC converters, switch mode power supplies, uninterrupted power supplies, and motor controls.
The FQAF16N25C is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency DC/DC converters, switch‑mode power supplies, UPS DC‑AC converters, and motor‑control applications.
Key specifications include a 250 V drain‑source rating, 11.4 A continuous drain current, 0.27 Ω typical on‑resistance at VGS = 10 V, and a low typical gate charge of 41 nC. The device features a thermal resistance of 1.7 °C/W (junction‑to‑case) and is rated for fast switching and high avalanche energy.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) | 11.4 A |
| On‑Resistance (RDS(on)) | 0.27 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 41 nC |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.7 °C/W |
The device is rated for a maximum drain‑source voltage of 250 V.
Its typical on‑resistance is 0.27 Ω when VGS is 10 V.
The typical gate charge is 41 nC.