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The FQAF16N25 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters and switch‑mode power supplies. It features low gate charge, low output capacitance, fast switching and 100 % avalanche testing, making it suitable for high‑energy pulse environments.
Key specifications include a 250 V drain‑source rating, 12.4 A continuous drain current at 25 °C, 0.23 Ω typical on‑resistance, and a total gate charge of about 27 nC. The device is supplied in a TO‑3PF package with thermal resistance of 1.47 °C·W (junction‑to‑case) and 40 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 12.4 A |
| Pulsed Drain Current (I_Dp) | 50 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.47 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
The device is rated for a maximum drain‑source voltage of 250 V.
It can conduct up to 12.4 A continuously at a case temperature of 25 °C.