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The FQAF16N25 is a 250 V N‑Channel enhancement‑mode power MOSFET featuring low on‑resistance, low gate charge, and fast switching performance. It is designed for high‑efficiency DC/DC converters and switch‑mode power supplies.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and package dimensions for the TO‑3PF case. It also includes test circuit diagrams, thermal data, and product status definitions.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 12.4 A |
| Pulsed Drain Current (I_D) (Note 1) | 50 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) @ V_GS=10 V | 0.232 Ω |
| Total Gate Charge (Q_g) typical | 27 nC |
| Power Dissipation (P_D) @ 25 °C | 85 W |
| Junction‑to‑Case Thermal Resistance | 1.47 °C·W |
| Junction‑to‑Ambient Thermal Resistance | 40 °C·W |
The FQAF16N25 can withstand up to 250 V drain‑source voltage.
It is rated for a continuous drain current of 12.4 A at 25 °C.
The typical total gate charge is about 27 nC.