Datasheet
M27W402 is a low power version of M27C4002, working voltage range is 2.7V-3.6V, with a transparent lid that can be erased by ultraviolet light, supporting 256Kbx16 data storage.
Datasheet
M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory has a wide x16 data bus for high bandwidth. It features supply voltage of VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations; VDDQ = 1.8V to VDD for I/O Buffers. It supports synchronous/asynchronous read, namely synchronous burst read, asynchronous random read, asynchronous address latch controlled read and page read. Access time is synchronous burst read up to 56MHz; asynchronous page mode read 90/25ns and 110/25ns; random read 90ns, 110ns. It features 16 word write buffer and 18µs word effective programming time. It features 64 uniform 32 KWord memory blocks, block protection/unprotection, program and erase suspend, 128 bit protection register, common flash interface and 100,000 program/erase cycles/block. Electronic signature is manufacturer code: 0020h - Device code M58LW032A: 8816h. It has two packages, TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm TBGA.
Datasheet
M29F400BT, M29F400BB are 4Mbit (512Kb x 8 or 256Kb x 16, Boot Block) single supply flash memory, support 5V±10% voltage, reading, programming, erasing time are 45ns, 8µs, 20 years data retention time, product features include 11 storage blocks, embedded byte/word programming algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bit, ready/busy output pin, erase suspend and resume mode, unlock bypass programming command, temporary block unprotected mode, low power consumption
Datasheet
M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory is the detailed information manual of M29DW324DB product
Datasheet
M29F102BB is a single-supply flash memory supporting 1Mbit (64Kb x16, boot block), with the following features: Single 5V ±10% supply voltage for program, erase and read operations; 35ns access time; 8µs program time per word typical; 5 memory blocks, 1 boot block (bottom location), 2 parameter and 2 main blocks; embedded word program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits; erase suspend and resume modes, read and program another block during erase suspend; unlock bypass program command, faster production/batch programming; temporary block unprotection mode; standby and automatic standby, each block supports 100,000 program/erase cycles; M28F102 compatible, pin-out and read mode; 20 years of data retention, defect rate below 1ppm/year; electronic signature, manufacturer code 0020h, bottom device code M29F102BB 0097h; compliant with lead-free soldering processes, lead-free versions.
Datasheet
M28W320ECT and M28W320ECB are 3V-supply 32Mbit (2Mb x16, Boot Block) Flash Memory. Main features include: supply voltage of VDD = 2.7V to 3.6V core power supply, VDDQ= 1.65V to 3.6V for input/output, VPP = 12V for fast programming (optional), access time of 70, 85, 90, 100ns, programming time of 10µs (typical), double-word programming option, quadruple-word programming option, common Flash interface, parameter blocks (top or bottom location), main blocks, all blocks locked at power-up, any combination of blocks can be locked, WP for block lock-down, 128-bit user programmable OTP cells, 64-bit unique device identifier, automatic standby mode, programming and erase suspend, 100,000 program/erase cycles/block, electronic signature (manufacturer code: 20h, top device code, M28W320ECT: 88BAh, bottom device code, M28W320ECB: 88BBh) etc.
Datasheet
The M27C1024 is a 1 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro-processor systems requiring large data or program storage and is organized as 65,536 words of 16 bits. The FDIP40W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For application where the content is programmed only one time and erasure is not required, the M27C1024 is offered in PDIP40, PLCC44 and TSOP40 (10 x 14mm) packages.
Datasheet
NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories are high density NAND flash memories with up to 1 Gbit memory array, up to 32 Mbit spare area, and cost effective solutions for mass storage applications.
Datasheet
This document introduces a 32 Mbit flash memory chip called M59DR032A and M59DR032B, which features low voltage supply, fast programming and erasing, dual bank memory array, block protection/unlocking, etc.
Datasheet
M29W641DH, M29W641DL, M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory features include supply voltage, access time, program time, storage block, program/erase controller, erase suspend and resume modes, unlock bypass program command, write protection options, temporary block unprotection mode, common flash interface, extended memory block, low power consumption and electronic signature
Datasheet
M29F200T and M29F200B are 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory. It features fast access time, fast programming time and low power consumption.
Datasheet
M27C4002 is a 4Mbit EPROM available in both UV (ultra violet erase) and OTP (one time programmable) versions. It is ideally suited for microprocessor systems requiring large programs and is organised as 262,144 words of 16 bits.
Datasheet
M28W160BT M28W160BB 16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory has the following features: the supply voltage is 2.7V to 3.6V, the data storage time is up to 20 years, and the defect rate is less than 1ppm/year.
Datasheet
The M27C256B is a 256 Kbit EPROM product, suitable for microprocessor systems, with features such as low power consumption, fast access time, and programmability.
Datasheet
The M27C160 is a 16 Mbit EPROM that is suitable for microprocessor systems requiring large data or program storage. It has fast access time, low power consumption, can be erased by ultraviolet light, programmable once, and has an electronic signature.
