M28W160BT M28W160BB 16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory has the following features: the supply voltage is 2.7V to 3.6V, the data storage time is up to 20 years, and the defect rate is less than 1ppm/year.
The M28W160BT and M28W160BB are 16 Mbit (1 M × 16) low‑voltage flash memory devices offered in TSOP48 and UBGA46 packages. The document provides a detailed description of the memory architecture, electrical specifications, pin functions, and supported commands such as read, program, erase, and CFI query.
Key features include a supply voltage range of 2.7 V–3.6 V (optional 12 V for fast programming), up to 100 000 program/erase cycles per block, 20 years data retention, and a total of 39 memory blocks with separate parameter and main blocks. The handbook also outlines device operations, timing, and status register usage.
| Memory Capacity | 16 Mbit (1 M × 16) |
|---|---|
| Supply Voltage (Vpp) | 2.7 V to 3.6 V (optional 12 V for fast program) |
| I/O Supply Voltage (Vppa) | 1.65 V to 2.7 V |
| Program Voltage (Vpp) High | 12 V (optional) |
| Program/Erase Cycles | 100 000 per block |
| Data Retention | 20 years |
| Operating Temperature | -40 °C to 85 °C |
| Storage Temperature | -55 °C to 155 °C |
| Package Types | TSOP48 (10 × 20 mm) and UBGA46 (0.75 mm ball pitch) |
| Number of Memory Blocks | 39 blocks (8 Parameter, 31 Main) |
Programming uses Vpp between 2.7 V and 3.6 V, with an optional 12 V supply for faster programming.
Each memory block supports up to 100 000 program/erase cycles.
The device can be stored from –55 °C up to 155 °C.
The memory is available in TSOP48 (10 × 20 mm) and UBGA46 (0.75 mm ball pitch) packages.