M29F200T and M29F200B are 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory. It features fast access time, fast programming time and low power consumption.
The M29F200T and M29F200B are 2 Mbit (256 Kb × 8 or 128 Kb × 16) single‑supply flash memory devices with a top‑boot (T) or bottom‑boot (B) configuration. They operate from a 5 V supply (±10 %) for programming, erase and read, feature a fast 55 ns access time and typical programming times of 10 µs per byte or 16 µs per word.
The devices support up to 100 000 program/erase cycles per block, 20 years data retention, and include block‑level protection, erase‑suspend/resume, and a programmable command interface. Pin‑out options are provided for TSOP‑48 packages with normal and reverse orientations.
| Supply Voltage (Program/Erase/Read) | 5 V ±10 % |
|---|---|
| Fast Access Time | 55 ns |
| Typical Programming Time | 10 µs per byte / 16 µs per word |
| Program/Erase Cycles per Block | 100 000 |
| Data Retention | 20 years |
| Defectivity | < 1 ppm/year |
| Operating Temperature Range | -40 °C to 125 °C |
| Supply Voltage Range | 0.6 V to 7 V |
| Manufacturer Code | 0x20 |
| Device Code (T variant) | 0x00D3 |
| Device Code (B variant) | 0x00D4 |
The devices require a 5 V supply with a ±10 % tolerance for programming, erase and read operations.
Each memory block can sustain up to 100 000 program/erase cycles.
M29F200T has the boot block at the top of the address space, while M29F200B places the boot block at the bottom.
The devices provide a fast access time of 55 ns.